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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complementary to 2SA1104 High Power Dissipation High Current Capability APPLICATIONS Audio power amplifier DC TO DC Converter PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2578 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 140 100 6 7 70 150 -55~150 ae ae UNIT V V V A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2578 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 140 V V(BR)CEO V(BR)EBO Collector-emitter breakdown voltage IC=10mA ;RBE= IC=0 ;IE=5mA 100 V Emitter-base breakdown voltage 6 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE1 DC current gain IC=1A ; VCE=5V 55 160 hFE2 DC current gain IC=3A ; VCE=5V 50 VCE(sat) Collector-emitter saturation voltage IC=3A ; IB=0.3A 2 V JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2578 Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) JMnic |
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